近年スピン偏極電流に関する研究が素子応用の観点から盛んに行われています. なかでもスピン流やスピン蓄積が非磁性体で生成・評価されており、界面散乱の抑制が大きな課題となっています. こうしたスピン流は隣接する強磁性層などにトルクを与え磁化反転などを起こすことができます. このようなスピン流の制御は論理メモリ回路作成のために極めて重要な要素技術です.
Recently, a spin-polarised electron current have been accumulating great interest as a fundamental property for a future spintronic device application. In particular, either a spin-polarised electron current or population imbalance of spin-polarised electrons (spin current) can be accumulated in non-magnetic metal or semiconductor by flowing a electron-charge current across the interface. Such a spin-polarized current or a spin current can then transfer their spin polarisation to an attached ferromagnet through spin torque, and can also be controlled by an external field application. Such spin manipulation (spin accumulation, transfer and operation) enables us to fabricate a spin transistor.
さらに興味のある方はFor further reading